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Poly(2-bromoethylsilsesquioxane). It is a thermally & UV labile sesquioxanes containing -electron withdrawing groups that can further be converted to silicon dioxide via elimination and hydrolysis at low temperatures or under UV exposure. The thermal reaction cascade for beta substituted silsesquioxanes leading to SiO<sub>2</sub> a rich structure with a low level of carbon occurs at temperatures above 180°. It converts to SiO<sub>2</sub> by UV and has 14-16% solution in methoxypropanol. Used in encapsulant applications. Poly(phenylsilsesquioxane). This T-resin is an alternate designation which indicates that there are three (tri-substituted) oxygens substituting the silicon. SST -3P01 is a highly cross-linked material with empirical formula RSiO<sub>1.5. </sub>. It is named from the organic group as well as its one and half (sesqui) stoichiometry of oxygen is bound to silicon. Polysilsesquioxane resins containing silanols (hydroxyls) can be cured at elevated temperatures. Its formulation and catalysis is generally performed at room-temperature or below. The condensation of silanols leads to cure and the resins become tough binders or films. The cure is usually accelerated by the addition of 0.1-0.5% of a catalyst such as dibutyltindiacetate, zinc acetate or zinc 2-ethylhexanoate. This resin as dielectric, planarization and reactive ion etch resistant layers finds application in microelectronics. It is also used in encapsulants and sealants. Poly(methyl-hydridosilsesquioxane). This T-resin is an alternate designation which indicates that there are three (tri-substituted) oxygens substituting the silicon. SST -3MH1.1 is a highly cross-linked material with empirical formula RSiO<sub>1.5. </sub>. It is named from the organic group as well as its one and half (sesqui) stoichiometry of oxygen is bound to silicon. Polysilsesquioxane resins containing silanols (hydroxyls) can be cured at elevated temperatures. Its formulation and catalysis is generally performed at room-temperature or below. The condensation of silanols leads to cure and the resins become tough binders or films. The cure is usually accelerated by the addition of 0.1-0.5% of a catalyst such as dibutyltindiacetate, zinc acetate or zinc 2-ethylhexanoate. This resin as dielectric, planarization and reactive ion etch resistant layers finds application in microelectronics. It is also used in encapsulants and sealants. Poly (2-acetoxyethylsilsesquioxane). It is a thermally & UV labile sesquioxanes containing -electron withdrawing groups that can further be converted to silicon dioxide via elimination and hydrolysis at low temperatures or under UV exposure. The thermal reaction cascade for beta substituted silsesquioxanes leading to SiO<sub>2</sub> a rich structure with a low level of carbon occurs at temperatures above 180°. It converts to SiO<sub>2</sub> at less than 300°C and has 18-20% solution in methoxypropanol. Used in encapsulant applications. (Phenylsilsesquioxane)-(dimethylsiloxane) copolymer. This T-resin is an alternate designation which indicates that there are three (tri-substituted) oxygens substituting the silicon. SST -3PM2 is a highly cross-linked material with empirical formula RSiO<sub>1.5. </sub>. It is named from the organic group as well as its one and half (sesqui) stoichiometry of oxygen is bound to silicon. Polysilsesquioxane resins containing silanols (hydroxyls) can be cured at elevated temperatures. Its formulation and catalysis is generally performed at room-temperature or below. The condensation of silanols leads to cure and the resins become tough binders or films. The cure is usually accelerated by the addition of 0.1-0.5% of a catalyst such as dibutyltindiacetate, zinc acetate or zinc 2-ethylhexanoate. This resin as dielectric, planarization and reactive ion etch resistant layers finds application in microelectronics. It is also used in encapsulants and sealants. (40% penyl- 45% methylsilsesquioxane)-(5% phenylmethylsiloxane) (10% diphenylsiloxane) tetrapolymer. This T-resin is an alternate designation which indicates that there are three (tri-substituted) oxygens substituting the silicon. SST -3PM4 is a highly cross-linked material with empirical formula RSiO<sub>1.5. </sub>. It is named from the organic group as well as its one and half (sesqui) stoichiometry of oxygen is bound to silicon. Polysilsesquioxane resins containing silanols (hydroxyls) can be cured at elevated temperatures. Its formulation and catalysis is generally performed at room-temperature or below. The condensation of silanols leads to cure and the resins become tough binders or films. The cure is usually accelerated by the addition of 0.1-0.5% of a catalyst such as dibutyltindiacetate, zinc acetate or zinc 2-ethylhexanoate. This resin as dielectric, planarization and reactive ion etch resistant layers finds application in microelectronics. It is also used in encapsulants and sealants. Poly(methacryloxypropylsilsesquioxane). This T-resin is an alternate designation which indicates that there are three (tri-substituted) oxygens substituting the silicon. SST -3R01 is a highly cross-linked material with empirical formula RSiO<sub>1.5. </sub>. It is named from the organic group as well as its one and half (sesqui) stoichiometry of oxygen is bound to silicon. Polysilsesquioxane resins containing silanols (hydroxyls) can be cured at elevated temperatures. Its formulation and catalysis is generally performed at room-temperature or below. The condensation of silanols leads to cure and the resins become tough binders or films. The cure is usually accelerated by the addition of 0.1-0.5% of a catalyst such as dibutyltindiacetate, zinc acetate or zinc 2-ethylhexanoate. This resin as dielectric, planarization and reactive ion etch resistant layers finds application in microelectronics. It is also used in encapsulants and sealants. Poly(methylsilsesquioxane). This T-resin is an alternate designation which indicates that there are three (tri-substituted) oxygens substituting the silicon. SST -3M02 is a highly cross-linked material with empirical formula RSiO<sub>1.5. </sub>. It is named from the organic group as well as its one and half (sesqui) stoichiometry of oxygen is bound to silicon. Polysilsesquioxane resins containing silanols (hydroxyls) can be cured at elevated temperatures. Its formulation and catalysis is generally performed at room-temperature or below. The condensation of silanols leads to cure and the resins become tough binders or films. The cure is usually accelerated by the addition of 0.1-0.5% of a catalyst such as dibutyltindiacetate, zinc acetate or zinc 2-ethylhexanoate. This resin as dielectric, planarization and reactive ion etch resistant layers finds application in microelectronics. It is also used in encapsulants and sealants. Poly(phenyl-methylsilsesquioxane). This T-resin is an alternate designation which indicates that there are three (tri-substituted) oxygens substituting the silicon. SST -3PM1 is a highly cross-linked material with empirical formula RSiO<sub>1.5. </sub>. It is named from the organic group as well as its one and half (sesqui) stoichiometry of oxygen is bound to silicon. Polysilsesquioxane resins containing silanols (hydroxyls) can be cured at elevated temperatures. Its formulation and catalysis is generally performed at room-temperature or below. The condensation of silanols leads to cure and the resins become tough binders or films. The cure is usually accelerated by the addition of 0.1-0.5% of a catalyst such as dibutyltindiacetate, zinc acetate or zinc 2-ethylhexanoate. This resin as dielectric, planarization and reactive ion etch resistant layers finds application in microelectronics. It is also used in encapsulants and sealants. Poly(phenyl-vinylsilsesquioxane). This T-resin is an alternate designation which indicates that there are three (tri-substituted) oxygens substituting the silicon. SST -3PV1 is a highly cross-linked material with empirical formula RSiO<sub>1.5. </sub>. It is named from the organic group as well as its one and half (sesqui) stoichiometry of oxygen is bound to silicon. Polysilsesquioxane resins containing silanols (hydroxyls) can be cured at elevated temperatures. Its formulation and catalysis is generally performed at room-temperature or below. The condensation of silanols leads to cure and the resins become tough binders or films. The cure is usually accelerated by the addition of 0.1-0.5% of a catalyst such as dibutyltindiacetate, zinc acetate or zinc 2-ethylhexanoate. This resin as dielectric, planarization and reactive ion etch resistant layers finds application in microelectronics. It is also used in encapsulants and sealants.
SST
Adhesive ingredients supplied by Gelest (Mitsubishi Chemical)